Save energy, increase power and efficiency: high-performance PPA by BASF for next-generation IGBT semi-conductors
For next-generation power electronics, BASF has developed a polyphthalamide (PPA) that is especially suited for manufacturing housings of IGBT (insulated-gate bipolar transistor) semi-conductors. Ultramid® Advanced N3U41 G6 addresses the growing demand for high-performance, reliable electronic components for e.g., electric vehicles, high-speed trains, smart manufacturing and the generation of renewable energy. Semikron Danfoss, a global technology leader in power electronics, now uses the BASF PPA as housing in its Semitrans 10 IGBT which can be installed in inverters of photovoltaic and wind energy systems. Due to its outstanding chemical resistance and dimensional stability, the Ultramid® Advanced N grade enhances the robustness, long-term performance and reliability of these IGBTs.